PHOTOCURRENT AMPLIFICATION EFFECT
OF THE FET GATE p-n JUNCTION

D. M. Edgorova

UDC 621.315.592

A superlinear increase in the light current of the gate 
with an increase in the exciting integral light intensity (from 100 
to 1000 lx) has been revealed experimentally. This superlinear increase 
is due to the increase in the internal gradient field generated by 
the minority carriers by the cutoff voltage of the gate leading to 
an additional interband generation of photocarriers. On the basis 
of the investigation of the dependence of photocurrent on the cutoff 
voltage it has been shown that the photocurrent increases linearly, 
which is explained by the creation of an internal electric field by 
the majority carriers of the base zone of the gate p-n 
junction.

Keywords: field-effect phototransistor, p-n junction, 
photocurrent, amplification effect, carrier density, gradient. 

Physicotechnical Institute, Scientific-Production Association 
"Fizika-Solntse," Academy of Sciences of the Republic of Uzbekistan, 
2 b Mavlyanov Str., Tashkent, 100084, Uzbekistan; email: yodgorova@uzsci.net. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 82, No. 1, pp. 
191-198, January-February, 2009. Original article submitted 
April 2, 2007; revision submitted January 17, 2008.