FUNCTIONAL POSSIBILITIES OF Ag-N0AlGaAs-n+GaAs-n0GaInAs-Au STRUCTURES 
WITH AN ISOTYPE BASE REGION

A. V. Karimov, D. M. Edgorova,
F. A. Giyasova, and R. A. Saidova

UDC 621.383.4/5.029.674:621.315.592.2

We have considered the spectral characteristics of two-base 
structures with isotype heterojunctions and with Schottky and Mott 
barriers to the base regions and explained the features of the impurity 
and photovoltaic effects in two-base structures containing deep impurity 
levels of oxygen and intrinsic defects.

Physical-Technical Institute, Scientific-Production Association 
"Fizika-Solntse" ("Physics-Sun"), Academy of Sciences of the 
Republic of Uzbekistan, 2b Mavlyanov Str., Tashkent, 700084, Uzbekistan. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 5, pp. 
1005-1009, September-October, 2008. Original article submitted 
September 4, 2007; revision submitted January 17, 2008.