DESIGN OF SEMICONDUCTOR MATERIALS FOR ELECTRONICS. 
SEGMENT OF THE TECHNOLOGICAL PROCESS: ANNEALING OF 
THE BASE SUBSTRATE AND FORMATION OF A NANOSTRUCTURE 
OF DOPANTS

G. A. Tarnavskii

UDC 519.2:541.1

For one production segment of designing semiconductor materials 
with given electrophysical properties, computer simulation of a number 
of basic technological physicochemical processes has been performed. 
With the use of high-resolution algorithms, the dynamics of thermal 
oxidation of the base material (silicon) and the evolution of the 
SiO2/S and SiO2/O2 oxide film interfaces have been investigated. Simulation of the 
process of segregation of the acceptor and donor dopants (boron and 
phosphorus) in the base material at the SiO2/S oxidation 
wave front has been performed. For the "trench"-type geometry 
of the substrate surface, the distributions of boron and phosphorus 
concentrations have been obtained. It has been shown that the uniform 
(at the initial instant of time) distribution of dopant concentrations 
in the base material transforms to a distribution of narrowly-localized 
(of width about 65 nm) high-intensity peaks. Such nanostructures of 
donor and acceptor impurities in the substrate provide the required 
semiconductor electrophysical properties of the material.

Institute of Computational Mathematics and Mathematical 
Geophysics, Siberian branch of the Russian Academy of Sciences, 6 
Lavrent'ev Ave., Novosibirsk, 630060, Russia; email: 
Gennady.Tarnavsky@gmail.com. Translated from Inzhenerno-Fizicheskii 
Zhurnal, Vol. 81, No. 5, pp. 994-1004, September-October, 2008. 
Original article submitted October 5, 2006; revision submitted 
November 14, 2007.