MODELING OF DIFFUSION MASS TRANSFER
OF IMPLANTED DOPANTS IN SILICON.
I. FORMULATION OF THE MODEL

B. B. Khina

UDC 621.315.592

A generalized model of diffusion mass transfer of implanted 
dopant atoms (donors and acceptors) in crystalline silicon has been 
developed. It takes into account all possible charge states of diffusing 
species (vacancies, interstitial Si atoms, and "dopant atom-vacancy" 
and "dopant atom-interstitial silicon atom" pairs) and the difference 
between the diffusion coefficients of differently charged pairs. Expressions 
for the source/sink terms are derived which describe all bimolecular 
reactions between the species (generation and annihilation) in the 
course of diffusion with account for their charges.

Physicotechnical Institute, National Academy of Sciences 
of Belarus, 10. Acad. Kuprevich Str., Minsk, 220141, Belarus; email: 
Khina@tut.by. Translated from Inzhenerno-Fizicheskii Zhurnal, 
Vol. 80, No. 5, pp. 3-11, September-October, 2007. Original article 
submitted November 27, 2006.