INFLUENCE OF THE THICKNESS OF THE BASE REGION
OF STRUCTURES WITH A SCHOTTKY BARRIER ON THEIR 
CURRENT AND PHOTOELECTRIC CHARACTERISTICS

D. M. Edgorova

UDC 621.383.4/5.029.674:621.315.592.2

The influence of the thickness of the base region with 
deep impurity levels of diode Ag-nGaAs-n+GaAs structures 
with a Schottky barrier on their photoelectric characteristics 
has been investigated. It was established that, on illumination of 
these structures by an integral light with max = 0.55  m, 
in some of them the quenching effect appears - the back light current 
becomes lower than the dark current, and in the other the light current 
predominates over the dark current under the direct-bias conditions. 
In this case, the decrease in the light current is explained by the 
trapping of light carriers and their recombination with dark carriers 
under the conditions where the voltage drop across the Schottky barrier 
exceeds the voltage drop across the base region, and vice versa the 
increase in the light current is due to the larger voltage drop across 
the base region.

Physical-Technical Institute, "Physica-Sun" Scientific-Production 
Association, Academy of Sciences of the Republic of Uzbekistan, 26 
Mavlyanov Str., Tashkent, 700084, Uzbekistan. Translated from Inzhenerno
-Fizicheskii Zhurnal, Vol. 80, No. 3, pp. 188-192, May-June, 2007. 
Original article submitted July 21, 2005; revision submitted June 27, 2006.