MODELING OF THE PARAMETERS
OF BIPOLAR TRANSISTORS

V. A. Pilipenko, D. V. Vecher, V. A. Gorushko,
T. V. Petlitskaya, and V. S. Syakerskii

UDC 621.382:621.373.820

A model for calculation of the parameters of a bipolar 
transistor has been proposed and the regularities of their change 
in fast thermal treatment of ion-doped silicon layers have been established.

Unitary Enterprise "Semiconductor-Device Plant," Science 
and Production Association "Integral," 1 Kazinets Sq., Minsk, 220108, 
Republic of Belarus. Translated from Inzhenerno-Fizicheskii Zhurnal, 
Vol. 80, No. 3, pp. 181-187, May-June, 2007. Original article 
submitted October 13, 2005; revision submitted January 13, 2006.