PHOTOPHYSICAL CHARACTERISTICS OF MICROLAYERPHOTODIODE 
pAlGaInAs(Zn)-nGaAs-Au STRUCTURES

D. M. Edgorova and F. M. Ashrapov

UDC 621.315.592

The photoelectric characteristics of photodiode
pAlGaInAs(Zn)-nGaAs-Au structures have been investigated.
It has been established experimentally that an internal
photoelectric amplification arises in these structures
when the nGaAs-Au potential barrier is connected in opposition
to the (p()As-nGaAs) heterojunction. The p()As-nGaAs-Au
structure operates as an injection photodiode when the p-n
junction operates in the forward-bias regime and as a photodiode
when this junction operates in the reverse-bias regime.
The influence of the depletion regions of the base zone
containing deep impurity centers on the photosensitivity
and the spectral range of the indicated structures has been
investigated.

Physical-Engineering Institute, Physics-Sun Research
and Production Association, Academy of Sciences of the Republic
of Uzbekistan, 26 Mavlyanov Str., Tashkent, 700084, Uzbekistan. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 1,
pp. 166-172, January-February, 2007. Original article submitted
June 3, 2005; revision submitted April 3, 2006.