MODEL OF LASER GETTERING
OF FAST-DIFFUSING IMPURITIES

V. A. Pilipenko, V. N. Ponomar',
and V. A. Gorushko

UDC 621.382:621.373.820

A model of gettering of fast-diffusing impurities in silicon 
wafers has been proposed; this model makes it possible to determine 
efficient gettering regimes ensuring the production of high-quality 
silicon wafers with reproducible characteristics for using them in 
the technology of creation of very large-scale integrated circuits.

"Belmikrosistemy" Unitary Enterprise, "Integral" Scientific-Production 
Association, 12 Korzhenevskii Str., Minsk, 220064, Belarus. Translated 
from Inzhenerno-Fizicheskii Zhurnal, Vol. 78, No. 3, pp. 190-192, 
May-June, 2005. Original article submitted June 8, 2004.