TRANSFORMATION OF THE DEFECTS OF GOLD
IN SILICON: STRUCTURAL PHASE TRANSITION

A. S. Zakirov, Kh. T. Igamberdiev, A. T. Mamadalimov, 
L. F. Musaeva, and A. A. Saidov

UDC 536.2

Based on the experimental data on the specific heat and 
photoconductivity of silicon doped with gold, the possible mechanisms 
of transformation of the impurity centers of gold in the crystal lattice 
of silicon and accordingly phase transitions are discussed.

Department of Thermal Physics, Academy of Sciences of 
the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan; email: 
saidov@uzsci.net. Translated from Inzhenerno-Fizicheskii Zhurnal, 
Vol. 76, No. 5, pp. 110-113, September-October, 2003. Original 
article submitted July 23, 2002; revision submitted March 17, 2003.