REMOVAL OF PHOTORESIST MASKS WITH THE USE OF RAPID HEAT TREATMENT

V. A. Pilipenko, V. N. Ponomar', and V. A. Gorushko

UDC 621.3.049.77.621.373.826

An analysis of the main methods of removal of photoresists, 
used in microelectronics, has been performed. The possibility of using 
rapid heat treatment for this purpose has been investigated and results 
of an analysis of the surface of silicon and aluminum after the removal 
of a photoresist have been presented. All the results have been considered 
in comparison to the traditional methods of removal of a photoresist, 
used in the technology of manufacture of very large-scale integrated 
circuits.

"Integral" Scientific-Production Association, 12 Korzhenevskii 
Str., Minsk, 220064, Belarus; email: belms@belms.belpak.minsk.by. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 5, pp. 
107-109, September-October, 2003. Original article submitted 
March 24, 2003.