CLEANING OF THE SURFACE OF SILICON STRUCTURES IN THE TECHNOLOGY OF VERY
LARGE-SCALE INTEGRATED CIRCUITS WITH THE USE OF RAPID HEAT TREATMENT

V. A. Pilipenko, V. N. Ponomar', and V. A. Gorushko

UDC 621.3.049.77.621.373.826

Results of investigation of the quality of cleaning of 
the surfaces of silicon, silicon dioxide, and aluminum films with 
the use of rapid heat treatment prior to the application of a photoresist 
and the influence of such cleaning on the deviation of the linear 
dimensions of a topological pattern subjected to etching are presented. 
All the results are considered in comparison to the traditional methods 
of surface cleaning. The parameters of the elements of very large-scale 
integrated circuits manufactured with the use of rapid heat treatment 
for cleaning of the surfaces of various thin-film materials coated 
on silicon are presented.

"Integral" Scientific-Production Association, 12 Korzhenevskii 
Str., Minsk, 220064, Belarus; email: belms@belms.belpak.minsk.by. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, No. 5, pp. 
103-106, September-October, 2003. Original article submitted 
March 5, 2003.