HYBRID MODEL OF THERMOSTABILIZATION OF THE DRAIN CURRENT 
IN n-CHANNEL MOS TRANSISTORS

A. D. Andreev, V. M. Borzdov, A. A. Valiev, 
O. G. Zhevnyak, and F. F. Komarov

UDC 621.382.323-416

A hybrid model, which makes it possible to calculate 
the influence of the drain voltage and the temperature on the mobility 
of electrons in the n-channel of silicon MOS transistors with a high-alloy 
substrate in the linear regime of their operation on the basis of 
a combination of analytical approximations and modeling of electron 
transfer by the Monte Carlo method, has been proposed.

Belarusian State University, Minsk, Belarus; email: 
borzdov@bsu.by. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 
76, No. 4, pp. 104-106, July-August, 2003. Original article 
submitted November 18, 2002.