MODELING OF THE SURFACE STRUCTURE IN GASDYNAMIC PROBLEMS 
WITH THE USE OF THE DATA OF ATOMIC-FORCE MICROSCOPY

O. E. Gerasimova,a S. F. Borisov,a 
C. Boragno,b and U. Valbusab 

UDC 533.722:541.183

The morphology of the surface of single-crystalline silicon 
as a function of the degree of oxidation has been investigated by 
the method of atomic-force microscopy. The roughness of the surface 
at different stages of treatment has been evaluated with the use of 
topographic images. It has been found that the standard deviation 
characterizing the distribution of microroughnesses by height, or 
the roughness, increases with oxidation of the sample. A histogram 
of the distribution of structural surface elements has been presented. 
The data obtained can be employed in specifying boundary conditions 
to gasdynamic problems.

aUral State University, Ekaterinburg, Russia; email: 
Sergei.Borisov@usu.ru; bGenoa University, Genoa, Italy. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 76, 
No. 2, pp. 151-154, March-April, 2003. Original article 
submitted October 11, 2002.