BILATERALLY SENSITIVE PHOTODIODE STRUCTURES
IN THE SYSTEM GALLIUM ARSENIDE-CADMIUM SULFIDE

K. Vakhobov,a A. V. Karimov,a A. G. Gaibov,a
D. M. Edgorova,a and Kh. T. Igamberdievb

UDC 621.315.592

It has been shown experimentally that in a double-barrier 
photodiode structure with a common modulated base region, the spectral 
characteristics for the cases of cutoff p-n-hetero- (pGaAs-nCdS) 
and metal-semiconductor (m-pGaAs) junctions can have the identical 
form where the mechanism of formation is determined by the processes 
occurring in the regions of space charge which are located predominantly 
in the common (pGaAs) region.

aTashkent State Technical University, Tashkent, Republic of Uzbekistan; 
bDepartment of Thermal Physics, Academy of Sciences of the Republic 
of Uzbekistan, Tashkent, Republic of Uzbekistan. Translated from Inzhenerno
-Fizicheskii Zhurnal, Vol. 76, No. 1, pp. 167-169, January-February, 2003. 
Original article submitted December 11, 2001; revision submitted July 
17, 2002.