CHARGE PROPERTIES OF A CONDENSER SYSTEM
BASED ON THE TWO-LAYER DIELECTRIC SiO2-Ta2O5

V. A. Pilipenko, V. N. Ponomar', and T. V. Petlitskaya

UDC 539.2116.2

A variant of a combined dielectric for the condensers 
of very large-scale integrated circuits (VLSICs) has been proposed. 
Its electrophysical and mechanical properties have been analyzed. 
The influence of the thickness of each of the dielectrics on the effective 
built-in charge, the permittivity, and the threshold voltage has been 
considered. Special emphasis has been placed on the residual mechanical 
stresses in a three-layer dielectric system, namely, the influence 
of the thickness of a Ta2O5 film on the radius of curvature of the Si-SiO2-Ta2O5 
system has been analyzed and the dependence of the change in the effective 
built-in charge in the Ta2O5 film on the 
radius of curvature of the plate has been determined.

"Integral" Scientific-Production Association, Minsk, Belarus; 
email:belms@belms.belpak.minsk.by. Translated from Inzhenerno-Fizicheskii 
Zhurnal, Vol. 76, No. 1, pp. 164-166, January-February, 2003. 
Original article submitted July 18, 2002.