PRESSURE TRANSDUCER BASED ON TENSOSENSITIVE FILMS OF 
BISMUTH-ANTIMONY TELLURIDE

Kh. T. Igamberdiev,a K. E. Onarkulov,b 
R. T. Rasulov,b and D. A. Yusupovab

UDC 621.362.1

A new design of a semiconductor pressure transducer based 
on tensosensitive films of bismuth-antimony telluride, which provides 
a temperature compensation for the entire device structure, is proposed. 
The technical data of the tensometric transducer proposed for measuring 
the pressure of liquids and gases are presented.

aDepartment of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, 
Tashkent, Republic of Uzbekistan; bFergana State University, Fergana, Republic 
of Uzbekistan. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 75, No. 6, pp. 66-67, 
November-December, 2002. Original article submitted December 11, 2001; revision 
submitted May 16, 2002.

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