SEMICONDUCTOR FATIGUE-DAMAGE INDICATOR

M. K. Karabaev,a K. E. Onarkulov,b
M. M. Akhmedov,b and D. A. Yusupovab

UDC 621.362.1

A means of using a semiconductor film element as a fatigue-damage 
indicator is substantiated. Methods of manufacturing it are described.

aTashkent State Medical Institute, Tashkent, Uzbekistan; 
bFergana State University, Fergana, Uzbekistan. Translated 
from Inzhenerno-Fizicheskii Zhurnal, Vol. 75, No. 5, pp. 180-181, 
September-October, 2002. Original article submitted September 
13, 2000; revision submitted September 12, 2001.

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