FEATURES OF FORMATION OF RESISTIVE STATES 
WITH ABNORMALLY SMALL TEMPERATURE
COEFFICIENTS OF ELECTRICAL RESISTANCE
IN THE HETEROGENEOUS SYSTEMS FeSi-FeSi2

V. V. Kryuk, A. V. Pilyugin,
A. A. Povzner, and I. N. Sachkov

UDC 544.344.2:536.212+544.431.13

An approach describing the influence of thermoelectric 
effects on the electrical resistance of the heterogeneous 
system metal-semiconductor is developed. The values of the 
parameters for which the minimum values of the temperature 
coefficient of resistance are realized are calculated 
using the heterogeneous system FeSi - FeSi2 as an example. 
It is shown that a marked influence on the electrical 
resistances in certain temperature intervals can be attained 
by creating temperature drops different in value at the 
specimen ends.

Ural State Technical University, Ekaterinburg, Russia; 
email: ppupi@k-uralsk.ru. Translated from Inzhenerno-Fizicheskii 
Zhurnal, Vol. 75, No. 3, pp. 171-174, May-June, 2002. 
Original article submitted July 6, 2001.

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