FEATURES OF SEGREGATION OF DOPING
IMPURITIES OF V(a) SUBGROUP ELEMENTS
ON ANGULAR CONFIGURATIONS
OF THE SILICON/SILICON DIOXIDE
OXIDATION BOUNDARY 
G. A. Tarnavskiia, S. I. Shpaka, and
M. S. Obrechtb

UDC 519.6:541.1

On the basis of computer simulation of the physicochemical 
process of segregation of doping impurities implanted in the basic 
material (silicon), the features of ejection of V(a) subgroup elements 
(phosphorus, arsenic, and antimony) on the angular configurations 
of the silicon/silicon dioxide oxidation boundary are investigated.

aInstitute of Theoretical and Applied Mechanics, Siberian Branch of the 
Russian Academy of Sciences, Novosibirsk; email: shpak@itam.nsc.ru; 
bUniversity of Waterloo, Ontario, Canada; email: obrecht@siborg.ca. 
Translated from Inzhenerno-Fizicheskii Zhurnal, 
Vol. 75, No. 1, pp. 142-147, January-February, 2002. 
Original article submitted April 3, 2001.

JEPTER7492020024
JEPTER749204