CALCULATION OF THE INFLUENCE
OF THE INJECTION RATE OF CARRIERS
ON THE VOLT-AMPERE CHARACTERISTICS
OF THE nc-Si/CaF2 MULTILAYER STRUCTURE
BY THE METHOD OF PARALLEL CALCULATIONS
V. A. Sizyuka, G. V. Miloshevskiib, and
I. Yu. Smurovc

UDC 621:382+519.6

On the basis of the Monte Carlo method a theoretical 
model of charge transfer processes in the multilayer nc-Si/CaF2 
structure has been developed. The constructed self-consistent 
model has made it possible to investigate the influence of the injection 
rate of charge carriers and the potential barrier height of a dielectric 
on the volt-ampere characteristic of the structure. The dependence 
of the rate of injection from a contact on the applied external voltage 
has been calculated. The main problem (large counting time) of the 
theoretical model has been solved by organizing parallel calculations 
in the developed code SIMPS. The realization of the SIMPS code written 
in the programming language Fortran-95 on a computer cluster for parallel 
calculations with distributed memory is presented. The results of 
the calculations demonstrate an increase in the calculation rate with 
increasing number of processors.

aA. V. Luikov Heat and Mass Transfer Institute, National 
Academy of Sciences of Belarus, Minsk, Belarus; email: sva@hmti.ac.by; 
bDepartment of Chemistry, Brandeis University, Waltham, Massachusetts, USA; 
email: miloshevsky@yahoo.com; 
cEcole Nationale d'Ingeniers de Saint-Etienne, France; email: smurov@imp-odeillo.fr. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 75, No. 1, pp. 133-141,
January-February, 2002. Original article submitted May 16, 2001.

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