CONDITIONS FOR FORMATION OF A ZERO TEMPERATURE COEFFICIENT 
OF RESISTANCE IN MATRIX SYSTEMS OF METAL-SEMICONDUCTOR
A. G. Andreeva, I. N. Sachkov, and A. A. Povzner

UDC 537.311+536.212

Using the method of finite elements, the authors have 
calculated the parameters of a heterophase metal-semiconductor 
system for which the minimum temperature coefficients of resistance 
(TCRs) are realized. The temperature-concentration region in which 
the TCR acquires values approaching zero has been established.

Ural State Technical University, Ekaterinburg, Russia. 
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 74, No. 1, pp. 
153-155, January-February, 2001. Original article submitted 
June 23, 2000. 

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