Journal of Engineering Physics and Thermophysics
is a translation of Inzhenerno-fizicheskii Zhurnal,
a publication of the Academic Scientific Complex
"A. V. Luikov Heat and Mass Transfer Institute"
of the National Academy of Sciences of Belarus
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CALCULATION OF THE GATE CURRENT DUE TO INJECTION OF
HOT ELECTRONS INTO THE SUBGATE OXIDE OF A SUBMICROMETER
MOS FIELD-EFFECT TRANSISTOR
V. M. Borzdov , N. P. Boreiko ,
V. O. Galenchik , O. G. Zhevnyak , and
F. F. Komarov
UDC 621.382.323-416
The gate current of a submicrometer MOS field-effect transistor
is calculated using the "lucky electron" model. The main
parameters of the model are estimated based on results of
a kinetic Monte Carlo simulation of the electron transport.
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