Journal of Engineering Physics and Thermophysics
is a translation of Inzhenerno-fizicheskii Zhurnal,
a publication of the Academic Scientific Complex
"A. V. Luikov Heat and Mass Transfer Institute"
of the National Academy of Sciences of Belarus
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INFLUENCE OF THE DOPING LEVEL AND THE TEMPERATURE ON
ELECTRON MOBILITY IN THE n CHANNEL OF AN MOS
FIELD-EFFECT TRANSISTOR
A. D. Andreev , V. M. Borzdov , A. A. Valiev ,
O. G. Zhevnyak, and F. F. Komarov
UDC 621.382.323-416
Based on results of measurement and processing of volt-ampere
characteristics as well as kinetic modeling of electron
transfer by the Monte Carlo method, the influence of the doping
level and the temperature on electron mobility in the n channel
of a silicon MOS field-effect transistor operating in a linear
regime is investigated.
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