ACTIVATION ENERGY OF THE CONDUCTANCE OF p–n-4H-SiC Al STRUCTURES DOPED WITH ALUMINUM BY THE METHOD OF LOW-TEMPERATURE DIFFUSION

A study has been made of the activation energy of the conductance of a p–n-4H-SiC Al structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy fl ux produced by the oxidation of the silicon surface.  
   
Author:  Kh. N. Zhuraev, A. Yusupov, A. G. Gulyamov, M. U. Khazhiev, D. Sh. Saidov, and N. B. Adilov
Keywords:  4H-SiC, p–n junction, low-temperature diffusion, activation energy.
Page:  1036