EFFECT OF CHARGED CLUSTERS ON THE DIFFUSION OF IMPURITY ATOMS IN SILICON CRYSTALS

An equation of diffusion of impurity atoms in silicon crystals has been obtained, based on which the influence of charged clusters in a silicon crystal on the process of impurity transfer can be determined. It is shown that a characteristic feature of this effect is the appearance of an additional flux of impurity atoms, which is capable of leading to impurity segregation
   
Author:  O. I. Velichko
Keywords:  diffusion, segregation, cluster, impurity, silicon
Page:  725